ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS

Journal «Language & Science» UTMN.


Release:

№7 2018. 05.00.00 ТЕХНИЧЕСКИЕ НАУКИ

Title: 
ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS


About the authors:

Liguz Nikolai Vitalievich,

Undergraduate Student, the University of Tyumen,

Liguz12@mail.ru


Garkusha Nadezhda Anatolievna,

Candidate of Pedagogic Sciences, University of Tyumen, Institute of Mathematics and Computer Sciences, Foreign Languages and Intercultural Professional Communication Department, Associate Professor, n.a.garkusha@utmn.ru


Abstract:

The main purpose of this article is to study the structure and properties of semiconductors at the molecular level. 
The conditions for the occurrence of conductivity and the influence of external factors on the bonds in the crystal lattice are considered in the text. The work of p-n transition is described.


References:

1) Muller, Richard S.; Theodore I. Kamins. Device Electronics for Integrated Circuits, 2d, New York: Wiley, 1986, pp. 2-10.
2) Sze, Simon M. Physics of Semiconductor Devices (2nd ed.). John Wiley and Sons (WIE), 1981, pp. 15-18.
3) Turley, Jim. The Essential Guide to Semiconductors. Prentice Hall PTR, 2002, pp. 43-44.
4) Yu, Peter Y.; Cardona, Manuel. Fundamentals of Semiconductors: Physics and Materials Properties. Springer, 2004, pp. 21-25.